Ultralow-threshold (50 A/cm2) strained single-quantum-well GaInAsSb/AlGaAsSb lasers emitting at 2.05 μm
Author:
Publisher
AIP Publishing
Subject
Physics and Astronomy (miscellaneous)
Link
http://aip.scitation.org/doi/pdf/10.1063/1.120922
Reference8 articles.
1. Molecular-beam epitaxy growth of high-performance midinfrared diode lasers
2. Ultralow‐loss broadened‐waveguide high‐power 2 μm AlGaAsSb/InGaAsSb/GaSb separate‐confinement quantum‐well lasers
3. 4 W quasi-continuous-wave output power from 2 μm AlGaAsSb/InGaAsSb single-quantum-well broadened waveguide laser diodes
4. InGaAs/AlGaAs strained single quantum well diode lasers with extremely low threshold current density and high efficiency
5. Excellent uniformity and very low (<50 A/cm2) threshold current density strained InGaAs quantum well diode lasers on GaAs substrate
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