Excellent uniformity and very low (<50 A/cm2) threshold current density strained InGaAs quantum well diode lasers on GaAs substrate
Author:
Publisher
AIP Publishing
Subject
Physics and Astronomy (miscellaneous)
Link
http://aip.scitation.org/doi/pdf/10.1063/1.105114
Reference15 articles.
1. Strain effects and band offsets in GaAs/InGaAs strained layered quantum structures
2. InGaAs/AlGaAs strained single quantum well diode lasers with extremely low threshold current density and high efficiency
3. Highly efficient pseudomorphic InGaAs/GaAs/AlGaAs single quantum well lasers for monolithic integration
4. Continuous, high‐power operation of a strained InGaAs/AlGaAs quantum well laser
5. Optical and microwave performance of GaAs-AlGaAs and strained layer InGaAs-GaAs-AlGaAs graded index separate confinement heterostructure single quantum well lasers
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