Strain effects and band offsets in GaAs/InGaAs strained layered quantum structures
Author:
Publisher
AIP Publishing
Subject
General Physics and Astronomy
Link
http://aip.scitation.org/doi/pdf/10.1063/1.344395
Reference46 articles.
1. Defects in epitaxial multilayers
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3. 2.6 μm InGaAs photodiodes
4. Electronic properties of pseudomorphic (on GaAs) and (on InP) Modfet structures
5. Characteristics of strained In/sub 0.65/Ga/sub 0.35/As/In/sub 0/./sub 52/Al/sub 0/./sub 48/As HEMT with optimized transport parameters
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