2.86 µm room-temperature light emission of InGaAsN/GaAsSb type-II quantum well diodes grown on InP substrates
Author:
Publisher
IOP Publishing
Subject
General Physics and Astronomy,Physics and Astronomy (miscellaneous),General Engineering
Reference9 articles.
1. Continuous-wave operation of type-I quantum well DFB laser diodes emitting in 3.4 [micro sign]m wavelength range around room temperature
2. InAs0.97N0.03/InGaAs/InP multiple quantum well lasers with emission wavelength = 2.38 [micro sign]m
3. The realization of long-wavelength ( 2.3 µm) Ga1 xInxAs1 yNyquantum wells on InP by molecular-beam epitaxy
4. InAsSbN Quantum Well Laser Diodes Operating at 2-µm-Wavelength Region Grown on InP Substrates
5. Optical properties of InAsSbN single quantum wells grown on InP substrates for 2-μm-wavelength region
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1. Phonon Characteristics of Gas-Source Molecular Beam Epitaxy-Grown InAs1−xNx/InP (001) with Identification of Si, Mg and C Impurities in InAs and InN;Crystals;2023-10-17
2. Simulation study on the diversity and characteristics of twin structures in GaN;Superlattices and Microstructures;2021-11
3. Applications of III-V Semiconductors for Mid-infrared Lasers;Molecular Beam Epitaxy;2019-02-08
4. Annealing effect on effective mass of two-dimensional electrons in InGaAsN/GaAsSb type II quantum well;Journal of Physics: Conference Series;2018-03
5. Annealing effects on the properties of InGaAsN/GaAsSb type-II quantum well diodes grown on InP substrates;physica status solidi (a);2016-11-08
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