The realization of long-wavelength ( 2.3 µm) Ga1 xInxAs1 yNyquantum wells on InP by molecular-beam epitaxy
Author:
Publisher
IOP Publishing
Subject
Condensed Matter Physics,General Materials Science
Link
http://stacks.iop.org/0953-8984/16/i=31/a=001/pdf
Reference31 articles.
1. GaInNAs: A Novel Material for Long-Wavelength-Range Laser Diodes with Excellent High-Temperature Performance
2. InGaAsN solar cells with 1.0 eV band gap, lattice matched to GaAs
3. GaInNAs resonant-cavity-enhanced photodetector operating at 1.3 μm
4. Bowing parameter of the band-gap energy of GaNxAs1−x
5. Band gaps of GaPN and GaAsN alloys
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2. Annealing effect on effective mass of two-dimensional electrons in InGaAsN/GaAsSb type II quantum well;Journal of Physics: Conference Series;2018-03
3. Effective mass of two-dimensional electrons in InGaAsN/GaAsSb type II quantum well by Shubnikov-de Haas oscillations;Journal of Applied Physics;2016-10-14
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5. Extended wavelength mid-infrared photoluminescence from type-I InAsN and InGaAsN dilute nitride quantum wells grown on InP;Applied Physics Letters;2015-06-08
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