Optical properties of InAsSbN single quantum wells grown on InP substrates for 2-μm-wavelength region
Author:
Publisher
Elsevier BV
Subject
Materials Chemistry,Inorganic Chemistry,Condensed Matter Physics
Reference10 articles.
1. 2.33-$\mu$m-Wavelength Distributed Feedback Lasers With InAs–In$_{0.53}$Ga$_{0.47}$As Multiple-Quantum Wells on InP Substrates
2. InAs0.97N0.03/InGaAs/InP multiple quantum well lasers with emission wavelength = 2.38 [micro sign]m
3. The realization of long-wavelength ( 2.3 µm) Ga1 xInxAs1 yNyquantum wells on InP by molecular-beam epitaxy
4. Properties of InAsSbN quantum well laser diodes operating at 2μm wavelength region grown on InP substrates
5. GaInNAs: A Novel Material for Long-Wavelength-Range Laser Diodes with Excellent High-Temperature Performance
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1. Metamorphic InGaAs/InAsPSb Quantum Well Light Emitting Diodes for Operation in the Short‐Wave Infrared Region;Advanced Functional Materials;2024-08-28
2. Phonon Characteristics of Gas-Source Molecular Beam Epitaxy-Grown InAs1−xNx/InP (001) with Identification of Si, Mg and C Impurities in InAs and InN;Crystals;2023-10-17
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4. Applications of III-V Semiconductors for Mid-infrared Lasers;Molecular Beam Epitaxy;2019-02-08
5. Annealing effect on effective mass of two-dimensional electrons in InGaAsN/GaAsSb type II quantum well;Journal of Physics: Conference Series;2018-03
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