Optical properties of GaAs0.5Sb0.5 and In0.53Ga0.47As/GaAs0.5Sb0.5 type II single hetero-structures lattice-matched to InP substrates grown by molecular beam epitaxy-Reference-Cited by-同舟云学术

Optical properties of GaAs0.5Sb0.5 and In0.53Ga0.47As/GaAs0.5Sb0.5 type II single hetero-structures lattice-matched to InP substrates grown by molecular beam epitaxy

Published:1999-05 Issue: Volume:201-202 Page:872-876
ISSN:0022-0248
Container-title:Journal of Crystal Growth
language:en
Short-container-title:Journal of Crystal Growth

Author:

Yamamoto A,Kawamura Y,Naito H,Inoue N

Publisher

Elsevier BV

Subject

Materials Chemistry,Inorganic Chemistry,Condensed Matter Physics

Reference7 articles.

1. Molecular beam epitaxy of GaSb0.5As0.5and AlxGa1−xSbyAs1−ylattice matched to InP

2. OMVPE growth of the metastable III/V alloy GaAs0.5Sb0.5

3. Molecular beam epitaxial growth and low‐temperature optical characterization of GaAs0.5Sb0.5on InP

4. Growth and characterization of GaAs0.5Sb0.5 lattice-matched to InP by molecular beam epitaxy

5. Growth and properties of GaAsSb/InGaAs superlattices on InP

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