Molecular beam epitaxial growth and low‐temperature optical characterization of GaAs0.5Sb0.5on InP
Author:
Publisher
AIP Publishing
Subject
Physics and Astronomy (miscellaneous)
Link
http://aip.scitation.org/doi/pdf/10.1063/1.97857
Reference10 articles.
1. Molecular‐beam epitaxy (MBE) of In1−xGaxAs and GaSb1−yAsy
2. Organometallic vapor phase epitaxial growth of GaAs0.5Sb0.5
3. Molecular beam epitaxy of GaSb0.5As0.5and AlxGa1−xSbyAs1−ylattice matched to InP
4. GaAs1−xSbx growth by OMVPE
5. Summary Abstract: GaAs1−ySby growth by molecular beam epitaxy
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