Metamorphic Ga0.76In0.24As/GaAs0.75Sb0.25 tunnel junctions grown on GaAs substrates
Author:
Affiliation:
1. National Renewable Energy Laboratory, Golden, Colorado 80401, USA
2. Instituto de Energía Solar, Universidad Politécnica de Madrid, Avda. Complutense s/n, 28040 Madrid, Spain
Funder
U.S. Department of Energy (DOE)
Publisher
AIP Publishing
Subject
General Physics and Astronomy
Link
http://aip.scitation.org/doi/pdf/10.1063/1.4892773
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