Incorporation of Sb and As in MBE grown GaAsxSb1−x layers
Author:
Affiliation:
1. TU Wien, Institute of Solid State Electronics, Floragasse 7, 1040 Wien, Austria
2. Austrian Academy of Sciences, Dr. Ignaz Seipel-Platz 2, 1010 Wien, Austria
3. TU Wien, Center for Micro- and Nanostructures, Floragasse 7, 1040 Wien, Austria
Publisher
AIP Publishing
Subject
General Engineering,General Materials Science
Link
http://aip.scitation.org/doi/pdf/10.1063/1.4973216
Reference23 articles.
1. InGaAs/GaAsSb/InP terahertz quantum cascade lasers
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