Investigation of deep level defects on Beryllium compensation doping of In053Ga047As/GaAs049Sb051 type-II superlattice photodiodes-Reference-Cited by-同舟云学术

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Investigation of deep level defects on Beryllium compensation doping of In053Ga047As/GaAs049Sb051 type-II superlattice photodiodes

Published:2018-06-04 Issue:12 Volume:26 Page:15308
ISSN:1094-4087
Container-title:Optics Express
language:en
Short-container-title:Opt. Express

Author:

Li Jinlan,Xu Zhicheng,Han Ping,Chen Jianxin,Ji Xiaoli

Funder

the China Academy of Space Technology Foundation

the National Key Research and Development Program of China

Publisher

The Optical Society

Subject

Atomic and Molecular Physics, and Optics

Reference26 articles.

1. SWIR/MWIR InP-Based p-i-n Photodiodes With InGaAs/GaAsSb Type-II Quantum Wells

2. Optical properties of GaAs0.5Sb0.5 and In0.53Ga0.47As/GaAs0.5Sb0.5 type II single hetero-structures lattice-matched to InP substrates grown by molecular beam epitaxy

3. A long-wavelength photodiode on InP using lattice-matched GaInAs-GaAsSb type-II quantum wells

4. Table of contents

5. Design of strain compensated InGaAs/GaAsSb type-II quantum well structures for mid-infrared photodiodes

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1. Deep-level transient spectroscopy of defect states at p-type oxide/β-Ga2O3 heterojunctions;Applied Physics Letters;2024-08-12

2. Deep level in the InAs/InAsSb superlattice revealed by forward-bias tunneling;Journal of Applied Physics;2023-10-06

3. Trap-assisted tunneling current and quantum efficiency loss in InGaAsSb short wavelength infrared photo detectors;Semiconductor Science and Technology;2022-10-13

4. Majority and Minority Carrier Traps in NiO/β-Ga₂O₃ p⁺-n Heterojunction Diode;IEEE Transactions on Electron Devices;2022-03

5. Random alloy thick AlGaAsSb avalanche photodiodes on InP substrates;Applied Physics Letters;2022-02-14

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