Author:
Bachmann T.,Wesch W.,Gärtner K.,Wendler E.
Subject
Instrumentation,Nuclear and High Energy Physics
Cited by
6 articles.
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1. Damage production in GaAs during MeV ion implantation;Nuclear Instruments and Methods in Physics Research Section B: Beam Interactions with Materials and Atoms;1996-12
2. Investigation of weakly damaged 〈110〉, 〈111〉 and 〈100〉 silicon by means of temperature dependent dechanneling measurements;Nuclear Instruments and Methods in Physics Research Section B: Beam Interactions with Materials and Atoms;1996-09
3. Structural and optical characterization of implanted and annealed semi-insulating GaAs;Nuclear Instruments and Methods in Physics Research Section B: Beam Interactions with Materials and Atoms;1993-06
4. Defect nucleation in weakly damaged ion implanted GaAs;Nuclear Instruments and Methods in Physics Research Section B: Beam Interactions with Materials and Atoms;1993-04
5. Modification of AmBv Semiconductor Layers by Ion Implantation;MRS Proceedings;1993