Structural and optical characterization of implanted and annealed semi-insulating GaAs

Author:

Trudeau Yves B.,Arès R.,Kajrys G.E.,Gagnon G.,Brebner J.L.,Jouanne M.

Publisher

Elsevier BV

Subject

Instrumentation,Nuclear and High Energy Physics

Cited by 6 articles. 订阅此论文施引文献 订阅此论文施引文献,注册后可以免费订阅5篇论文的施引文献,订阅后可以查看论文全部施引文献

1. An IR-reflectivity and X-ray diffraction study of high energy He-ion implantation-induced damage in 4H–SiC;Nuclear Instruments and Methods in Physics Research Section B: Beam Interactions with Materials and Atoms;2002-01

2. Photoluminescence of Be implanted Si-doped GaAs;Journal of Electronic Materials;1999-12

3. High energy ion implantation studies on GaAs and InP;Nuclear Instruments and Methods in Physics Research Section B: Beam Interactions with Materials and Atoms;1999-07

4. CO-implantation of Si and Be in SI GaAs for improved device performance;Solid-State Electronics;1998-11

5. Persistent room‐temperature relaxation of InP amorphized and compacted by MeV ion beams;Applied Physics Letters;1994-10-03

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