MeV ion implantation in GaAs technology-Reference-Cited by-同舟云学术

MeV ion implantation in GaAs technology

Published:1991-07 Issue: Volume:59-60 Page:592-599
ISSN:0168-583X
Container-title:Nuclear Instruments and Methods in Physics Research Section B: Beam Interactions with Materials and Atoms
language:en
Short-container-title:Nuclear Instruments and Methods in Physics Research Section B: Beam Interactions with Materials and Atoms

Author:

Thompson Phillip E.

Publisher

Elsevier BV

Subject

Instrumentation,Nuclear and High Energy Physics

Reference26 articles.

Cited by 21 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. Impact of MeV-Ag ions irradiation of silicon substrate on structural and optical properties of porous silicon;Nuclear Instruments and Methods in Physics Research Section B: Beam Interactions with Materials and Atoms;2024-03

2. MeV-Fe ions implantation of GaAs – Induced morphological and structural modification of porous GaAs;Nuclear Instruments and Methods in Physics Research Section B: Beam Interactions with Materials and Atoms;2021-04

4. Stopping power of GaAs for swift protons: Dielectric function and optical-data model calculations;Nuclear Instruments and Methods in Physics Research Section B: Beam Interactions with Materials and Atoms;2010-06