Electrical Characteristics of GaAs Implanted with High Energy (100 MeV) <sup>28</sup>Si and <sup>120</sup>Sn Ions-Reference-Cited by-同舟云学术

Electrical Characteristics of GaAs Implanted with High Energy (100 MeV) ²⁸Si and ¹²⁰Sn Ions

Published:2014-10 Issue: Volume:661 Page:3-7
ISSN:1662-7482
Container-title:Applied Mechanics and Materials
language:
Short-container-title:AMM

Author:

Ali Yousuf Pyar,Narsale Arun M.¹,Arora Brij Mohan²

Affiliation:

1. WRIC, Mumbai University

2. Iit-mumbai

Abstract

In this work we carried out electrical characterization of n-GaAs implanted at 300 K with high energy (100 MeV)28Si and120Sn ions to a fluence of 1x1018ions/m2using current–voltage (I-V) measurements. The as implanted samples and samples annealed in the temperature range 373-1123 K have been investigated. Resistance of the samples obtained from I-V curves recorded over the temperature range 110K-270K indicate that the samples implanted with28Si and annealed up to 623 K and the samples implanted with120Sn and annealed up to 723K shows tunnel assisted hoping conduction mechanism. In the other hand,28Si implanted samples annealed to 723K and 823K and120Sn implanted samples annealed to 823K and 923K the electrical conduction mechanism is dominated by thermal hoping between closed defect states.

Publisher

Trans Tech Publications, Ltd.

Link

https://www.scientific.net/AMM.661.3.pdf

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