Persistent room‐temperature relaxation of InP amorphized and compacted by MeV ion beams-Reference-Cited by-同舟云学术

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Persistent room‐temperature relaxation of InP amorphized and compacted by MeV ion beams

Published:1994-10-03 Issue:14 Volume:65 Page:1754-1756
ISSN:0003-6951
Container-title:Applied Physics Letters
language:en
Short-container-title:Appl. Phys. Lett.

Author:

Cliche L.,Roorda S.,Masut R. A.

Publisher

AIP Publishing

Subject

Physics and Astronomy (miscellaneous)

Link

http://aip.scitation.org/doi/pdf/10.1063/1.112907

Reference14 articles.

1. Low-Temperature Length Change Measurements of Electron-Irradiated Germanium and Silicon

2. Radiation Defect-Induced Lattice Contraction of InP

3. Structural and optical characterization of implanted and annealed semi-insulating GaAs

4. Density of amorphous Si

5. Density measurement of amorphous SixGe1 − x alloys

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1. Drastic structure changes in pre-damaged GaAs crystals irradiated with swift heavy ions;Nuclear Instruments and Methods in Physics Research Section B: Beam Interactions with Materials and Atoms;2015-10

2. Amorphous InSb: Longer bonds yet higher density;Journal of Applied Physics;2010-07-15

3. Properties of indium phosphite and selected compounds under irradiation with swift heavy ions;Physics of Particles and Nuclei;2010-03

4. Surface modifications by swift heavy-ion irradiation of indium phosphide;Physics of Particles and Nuclei Letters;2008-09

5. Nanocavities in He implanted InP;Journal of Applied Physics;2003-11

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