Abstract
ABSTRACTThe damage production in GaAs, InAs, GaP and InP implanted with different mass ions in the temperature region 80K to 450K has been investigated by means of the RBS/channeling technique at 300K and 100K as well as by optical transmission and reflection measurements. The influence of the implantation parameters on the damage production as well as the differences observed for the various materials are discussed. Further, results concerning the electrical activation after rapid thermal annealing of GaAs and InP implanted at different temperatures are presented.
Publisher
Springer Science and Business Media LLC
Cited by
10 articles.
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