Radiation damage and optical properties of Ar+‐implanted GaP
Author:
Publisher
AIP Publishing
Subject
General Physics and Astronomy
Link
http://aip.scitation.org/doi/pdf/10.1063/1.350302
Reference15 articles.
1. Ion-beam-induced annealing effects in GaAs
2. Mechanisms of amorphization and recrystallization in ion implanted III–V compound semiconductors
3. Amorphous GaP produced by ion implantation
4. Defect production during ion implantation of variousAIIIBVsemiconductors
5. Calculation of optical reflection and transmission coefficients of a multi-layer system
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