Impact of implantation geometry and fluence on structural properties of AlxGa1-xN implanted with thulium
Author:
Affiliation:
1. IPFN, Campus Tecnológico e Nuclear, Instituto Superior Técnico, Universidade de Lisboa, Estrada Nacional 10, 2695-066 Bobadela LRS, Portugal
2. CIMAP, UMR 6252, CNRS-ENSICAEN-CEA-UCBN, 6, Bd Marechal Juin, 14050 Caen, France
Funder
Fundação para a Ciência e Tecnolologia
Publisher
AIP Publishing
Subject
General Physics and Astronomy
Link
http://aip.scitation.org/doi/pdf/10.1063/1.4966120
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3. AlGaN devices and growth of device structures
4. High hole concentration in p-type AlGaN by indium-surfactant-assisted Mg-delta doping
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