High hole concentration in p-type AlGaN by indium-surfactant-assisted Mg-delta doping-Reference-Cited by-同舟云学术

High hole concentration in p-type AlGaN by indium-surfactant-assisted Mg-delta doping

Published:2015-04-20 Issue:16 Volume:106 Page:162102
ISSN:0003-6951
Container-title:Applied Physics Letters
language:en
Short-container-title:Appl. Phys. Lett.

Author:

Chen Yingda¹,Wu Hualong¹,Han Enze¹,Yue Guanglong¹,Chen Zimin¹,Wu Zhisheng¹,Wang Gang¹,Jiang Hao¹

Affiliation:

1. State Key Laboratory of Optoelectronic Materials and Technologies, School of Physics and Engineering, Sun Yat-sen University, Guangzhou 510275, People's Republic of China

Funder

National Basic Research Program (973 program) of China

Publisher

AIP Publishing

Subject

Physics and Astronomy (miscellaneous)

Link

http://aip.scitation.org/doi/pdf/10.1063/1.4919005

Reference20 articles.

1. Effect of Thickness of the p-AlGaN Electron Blocking Layer on the Improvement of ESD Characteristics in GaN-Based LEDs

2. Enhancement of p-type conductivity by modifying the internal electric field in Mg- and Si-δ-codoped AlxGa1−xN/AlyGa1−yN superlattices

3. The Advantages of AlGaN-Based UV-LEDs Inserted With a p-AlGaN Layer Between the EBL and Active Region

4. Significant Performance Improvement in AlGaN Solar-Blind Avalanche Photodiodes by Exploiting the Built-In Polarization Electric Field

5. Incorporation of Mg in GaN grown by plasma-assisted molecular beam epitaxy

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