Europium-Implanted AlN Nanowires for Red Light-Emitting Diodes-Reference-Cited by-同舟云学术

Europium-Implanted AlN Nanowires for Red Light-Emitting Diodes

Published:2022-01-06 Issue:1 Volume:5 Page:972-984
ISSN:2574-0970
Container-title:ACS Applied Nano Materials
language:en
Short-container-title:ACS Appl. Nano Mater.

Author:

Cardoso José P. S.¹^ORCID,Correia Maria Rosário¹,Vermeersch Remy²³,Verheij Dirkjan⁴⁵,Jacopin Gwenole³^ORCID,Pernot Julien³^ORCID,Monteiro Teresa¹^ORCID,Cardoso Susana⁵^ORCID,Lorenz Katharina⁴⁵,Daudin Bruno²,Ben Sedrine Nabiha⁶^ORCID

Affiliation:

1. Departamento de Física & i3N, Universidade de Aveiro, Campus Universitário de Santiago, 3810-193 Aveiro, Portugal

2. Univ. Grenoble Alpes, CEA, IRI-PHELIQS, NPSC, 17 rue des martyrs, 38000 Grenoble, France

3. Univ. Grenoble Alpes, CNRS, Grenoble INP, Institut Néel, 38000 Grenoble, France

4. IPFN, Instituto Superior Técnico, Campus Tecnológico e Nuclear, Estrada Nacional 10, 2695-066 Bobadela LRS, Portugal

5. Instituto de Engenharia de Sistemas de Computadores─Microsistemas e Nanotecnologia (INESC-MN), Rua Alves Redol, 1000-029 Lisboa, Portugal

6. i3N, Universidade de Aveiro, Campus Universitário de Santiago, 3810-193 Aveiro, Portugal

Funder

European Social Fund

Funda??o para a Ci?ncia e a Tecnologia

Publisher

American Chemical Society (ACS)

Subject

General Materials Science

Link

https://pubs.acs.org/doi/pdf/10.1021/acsanm.1c03654

Reference70 articles.

1. White light emitting diodes with super-high luminous efficacy

2. Highly efficient InGaN green mini-size flip-chip light-emitting diodes with AlGaN insertion layer

3. Recent progress in red light-emitting diodes by III-nitride materials

4. Pyroelectric properties of Al(In)GaN/GaN hetero- and quantum well structures

5. Interpretation of europium(III) spectra

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