Defect production during ion implantation of variousAIIIBVsemiconductors
Author:
Publisher
AIP Publishing
Subject
General Physics and Astronomy
Link
http://aip.scitation.org/doi/pdf/10.1063/1.343134
Reference28 articles.
1. Ion-beam-induced annealing effects in GaAs
2. The application of low angle Rutherford backscattering and channelling techniques to determine implantation induced disorder profile distributions in semiconductors
3. Ion implantation and low‐temperature epitaxial regrowth of GaAs
4. Lattice disorder produced in GaAs by 60 keV Cd ions and 70 keV Zn ions
5. Low temperature channeling measurements of ion implantation lattice disorder in GaAs†
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