Lattice disorder produced in GaAs by 60 keV Cd ions and 70 keV Zn ions
Author:
Affiliation:
1. a California Institute of Technology , Pasadena , California , U.S.A.
2. b Hughes Research Laboratories , Malibu , California , U.S.A.
Publisher
Informa UK Limited
Subject
General Engineering
Link
https://www.tandfonline.com/doi/pdf/10.1080/00337577008235028
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1. ION IMPLANTATION OF SILICON: I. ATOM LOCATION AND LATTICE DISORDER BY MEANS OF 1.0-MeV HELIUM ION SCATTERING
2. Ion implantation of silicon and germanium at room temperature. Analysis by means of 1.0-MeV helium ion scattering
3. ON THE NUMBER OF ATOMS DISPLACED BY IMPLANTED IONS OR ENERGETIC RECOIL ATOMS
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