Author:
Wendler E.,Wesch W.,Götz G.
Subject
Instrumentation,Nuclear and High Energy Physics
Cited by
25 articles.
订阅此论文施引文献
订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献
1. Low-temperature damage formation in ion implanted InP;Nuclear Instruments and Methods in Physics Research Section B: Beam Interactions with Materials and Atoms;2013-07
2. Empirical modeling of the cross section of damage formation in ion implanted III-V semiconductors;Applied Physics Letters;2012-05-07
3. Damage evolution and amorphization in semiconductors under ion irradiation;Nuclear Instruments and Methods in Physics Research Section B: Beam Interactions with Materials and Atoms;2012-04
4. Peculiarities of the track formation in InP and GaAs crystals;Vacuum;2005-05
5. Argon implantation into GaAs and in situ RBS analysis at 21 and 77 K;Nuclear Instruments and Methods in Physics Research Section B: Beam Interactions with Materials and Atoms;2000-03