H− ion implantation induced ten-fold increase of photoluminescence efficiency in single layer InAs/GaAs quantum dots
Author:
Funder
DST
European Commission
Publisher
Elsevier BV
Subject
Condensed Matter Physics,Biochemistry,General Chemistry,Atomic and Molecular Physics, and Optics,Biophysics
Reference46 articles.
1. High efficiency and high modal gain InAs/InGaAs/GaAs quantum dot lasers emitting at 1300 nm
2. Comparison of InAs/GaAs Quantum Dot Infrared Photodetector and GaAs/(AlGa)As Superlattice Infrared Photodetector
3. Transition dipole moment of InAs/InGaAs quantum dots from experiments on ultralow-threshold laser diodes
4. Formation and optical properties of InAs/GaAs quantum dots for applications as infrared photodetectors operating at room temperature
5. Demonstration of a 320×256 two-color focal plane array using InAs/InGaAs quantum dots in well detectors
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1. Realization of high-quality InGaAs/GaAs quantum dot growth on Ge substrate and improvement of optical property through ex-situ ion implantation;Journal of Luminescence;2020-07
2. Effects of Ar Plasma Treatment on Photoluminescence Properties of GaAs Nanowires;CHIN J LASERS;2019
3. Improvement in NEDT characteristics of InAs/GaAs quantum dot based 320x256 focal plane array implanted with hydrogen ions;Infrared Technology and Applications XLIV;2018-05-14
4. Impact of phosphorus ion implantation on the material and optical properties of InAs/GaAs quantum dots;Quantum Dots and Nanostructures: Growth, Characterization, and Modeling XV;2018-02-21
5. Low-Energy Ion Implantation Over Single-Layer InAs/GaAs Quantum Dots;Impact of Ion Implantation on Quantum Dot Heterostructures and Devices;2017
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