Formation and optical properties of InAs/GaAs quantum dots for applications as infrared photodetectors operating at room temperature
Author:
Publisher
AIP Publishing
Subject
Physics and Astronomy (miscellaneous)
Link
http://aip.scitation.org/doi/pdf/10.1063/1.1540733
Reference17 articles.
1. Infrared spectroscopy of intraband transitions in self-organized InAs/GaAs quantum dots
2. Far-infrared photoconductivity in self-organized InAs quantum dots
3. Normal-incidence intersubband (In, Ga)As/GaAs quantum dot infrared photodetectors
4. Intersublevel transitions in InAs/GaAs quantum dots infrared photodetectors
5. Characteristics of InGaAs quantum dot infrared photodetectors
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3. Effects of high energy proton implantation on the optical and electrical properties of In(Ga)as/GaAs QD heterostructures with variations in the capping layer;Journal of Luminescence;2015-05
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