Effects of high energy proton implantation on the optical and electrical properties of In(Ga)as/GaAs QD heterostructures with variations in the capping layer-Reference-Cited by-同舟云学术

Effects of high energy proton implantation on the optical and electrical properties of In(Ga)as/GaAs QD heterostructures with variations in the capping layer

Published:2015-05 Issue: Volume:161 Page:129-134
ISSN:0022-2313
Container-title:Journal of Luminescence
language:en
Short-container-title:Journal of Luminescence

Author:

Upadhyay S.,Mandal A.,Ghadi H.,Pal D.,Basu A.,Agarwal A.,Subrahmanyam N.B.V.,Singh P.,Chakrabarti S.

Funder

Department of Science and Technology, Government of India

Ministry of Communications & Information Technology, Government of India

Centre of Excellence in Nanoelectronics, IIT Bombay

Publisher

Elsevier BV

Subject

Condensed Matter Physics,Biochemistry,General Chemistry,Atomic and Molecular Physics, and Optics,Biophysics

Reference30 articles.

1. High efficiency and high modal gain InAs/InGaAs/GaAs quantum dot lasers emitting at 1300 nm

2. Comparison of InAs/GaAs Quantum Dot Infrared Photodetector and GaAs/(AlGa)As Superlattice Infrared Photodetector

3. Formation and optical properties of InAs/GaAs quantum dots for applications as infrared photodetectors operating at room temperature

4. Normal-incidence intersubband (In, Ga)As/GaAs quantum dot infrared photodetectors

5. High-detectivity, normal-incidence, mid-infrared (λ∼4 μm)InAs/GaAs quantum-dot detector operating at 150 K

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