Defect formation and optical activation of Tb implanted AlxGa1−xN films using channeled implantation at different temperatures-Reference-Cited by-同舟云学术

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Defect formation and optical activation of Tb implanted AlxGa1−xN films using channeled implantation at different temperatures

Published:2018-12 Issue: Volume:355 Page:29-39
ISSN:0257-8972
Container-title:Surface and Coatings Technology
language:en
Short-container-title:Surface and Coatings Technology

Author:

Fialho M.,Magalhães S.,Rodrigues J.,Chauvat M.P.,Ruterana P.,Monteiro T.,Lorenz K.,Alves E.

Publisher

Elsevier BV

Subject

Materials Chemistry,Surfaces, Coatings and Films,Surfaces and Interfaces,Condensed Matter Physics,General Chemistry

Reference53 articles.

1. GaN technology for power electronic applications: a review;Flack;J. Electron. Mater.,2016

2. Group III-nitride lasers: a materials perspective;Hardy;Mater. Today,2011

3. Ultraviolet light-emitting diodes based on group three nitrides;Khan;Nat. Photonics,2008

4. the SORBET consortium, It's not easy being green: strategies for all-nitrides, all-colour solid state lighting;O'Donnell;Phys. Status Solidi RRL – Rapid Res. Lett.,2012

5. White light emission from GaN stack layers doped by different rare-earth metals;Zhang;Jpn. J. Appl. Phys.,2015

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3. Semiconductor Characteristic and Ferromagnetism in Rare Earth (Eu, Er)-Doped AlGaN Alloy: LSDA + U Approach;Brazilian Journal of Physics;2022-12-28

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