Rapid amorphization in InxGa1−xAs alloys at temperatures between 15K and 300K
Author:
Publisher
Elsevier BV
Subject
Instrumentation,Nuclear and High Energy Physics
Reference19 articles.
1. Ion damage buildup and amorphization processes in AlxGa1−xAs
2. In situ RBS investigation of damage production during ion implantation in AlxGa1−xAs at 20 K
3. Modification of AmBv Semiconductor Layers by Ion Implantation
4. Local structural modification in ion damaged InGaAs
Cited by 7 articles. 订阅此论文施引文献 订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献
1. Ion-implantation-induced amorphization of InxGa1−xP alloys as functions of stoichiometry and temperature;Journal of Applied Physics;2016-05-21
2. Drastic structure changes in pre-damaged GaAs crystals irradiated with swift heavy ions;Nuclear Instruments and Methods in Physics Research Section B: Beam Interactions with Materials and Atoms;2015-10
3. (Invited) A Brief Review of Doping Issues in III-V Semiconductors;ECS Transactions;2013-05-03
4. Empirical modeling of the cross section of damage formation in ion implanted III-V semiconductors;Applied Physics Letters;2012-05-07
5. Damage evolution and amorphization in semiconductors under ion irradiation;Nuclear Instruments and Methods in Physics Research Section B: Beam Interactions with Materials and Atoms;2012-04
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