Author:
Weber B.,Wendler E.,Gärtner K.,Stock D.M.,Wesch W.
Subject
Instrumentation,Nuclear and High Energy Physics
Cited by
11 articles.
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1. Defects and mechanical properties in weakly damaged Si ion implanted GaAs;Physical Review B;2019-06-24
2. Damage formation and optical absorption in neutron irradiated SiC;Nuclear Instruments and Methods in Physics Research Section B: Beam Interactions with Materials and Atoms;2012-09
3. Investigation of heavily damaged ion implanted Si by atomistic simulation of Rutherford backscattering channeling spectra;Nuclear Instruments and Methods in Physics Research Section B: Beam Interactions with Materials and Atoms;2005-04
4. Channeling characterization of defects in silicon: an atomistic approach;Nuclear Instruments and Methods in Physics Research Section B: Beam Interactions with Materials and Atoms;2005-04
5. Analysis of ion implanted silicon by RBS-channeling: influence of the damage model;Nuclear Instruments and Methods in Physics Research Section B: Beam Interactions with Materials and Atoms;2004-06