Author:
Matsunami Noriaki,Goto Taizan,Itoh Noriaki
Cited by
17 articles.
订阅此论文施引文献
订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献
1. Differences in the damage production of proton implanted GaAs, Ge and Si investigated by temperature dependent dechanneling;Nuclear Instruments and Methods in Physics Research Section B: Beam Interactions with Materials and Atoms;1992-01
2. Investigation of defects by RBS-channeling methods;Nuclear Instruments and Methods in Physics Research Section B: Beam Interactions with Materials and Atoms;1992-01
3. Investigation of point defects by temperature-dependent dechanneling;Nuclear Instruments and Methods in Physics Research Section B: Beam Interactions with Materials and Atoms;1990-04
4. Temperature dependence of axial dechanneling by point defects;Nuclear Instruments and Methods in Physics Research Section B: Beam Interactions with Materials and Atoms;1990-03
5. Analysis of molecular‐beam epitaxially grown ZnSe on GaAs and GaP by means of ion channeling;Journal of Applied Physics;1987-12