Analysis of molecular‐beam epitaxially grown ZnSe on GaAs and GaP by means of ion channeling
Author:
Publisher
AIP Publishing
Subject
General Physics and Astronomy
Link
http://aip.scitation.org/doi/pdf/10.1063/1.339034
Reference11 articles.
1. Growth of undoped, high purity, high resistivity ZnSe layers by molecular beam epitaxy
2. Comparison of MOCVD-Grown with Conventional II-VI Materials Parameters for EL Thin Films)
3. Organometallic vapor deposition of epitaxial ZnSe films on GaAs substrates
4. Lattice structure at ZnSeGaAs heterojunction interfaces prepared by organometallic chemical vapor deposition
5. High resolution transmission electron microscopy (HRTEM) of interfaces in epitaxial ZnSeyS1 − y grown by MOCVD
Cited by 5 articles. 订阅此论文施引文献 订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献
1. Characterization Techniques;Molecular Beam Epitaxy;1996
2. Ion Beam Analysis of ZnSe;Japanese Journal of Applied Physics;1992-04-15
3. Post-implantation defects and non-stoichiometry of I-implanted ZnSe;Non-Stoichiometry in Semiconductors;1992
4. Dislocations in strained-layer epitaxy: theory, experiment, and applications;Materials Science Reports;1991-11
5. Postgrowth Characterization Methods;Molecular Beam Epitaxy;1989
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