TED of boron in the presence of EOR defects: the use of the theory of Ostwald ripening to calculate Si-interstitial supersaturation in the vicinity of extrinsic defects-Reference-Cited by-同舟云学术

TED of boron in the presence of EOR defects: the use of the theory of Ostwald ripening to calculate Si-interstitial supersaturation in the vicinity of extrinsic defects

Published:1996-05 Issue:1-4 Volume:112 Page:129-132
ISSN:0168-583X
Container-title:Nuclear Instruments and Methods in Physics Research Section B: Beam Interactions with Materials and Atoms
language:en
Short-container-title:Nuclear Instruments and Methods in Physics Research Section B: Beam Interactions with Materials and Atoms

Author:

Bonafos C.,Alquier D.,Martinez A.,Mathiot D.,Claverie A.

Publisher

Elsevier BV

Subject

Instrumentation,Nuclear and High Energy Physics

Reference13 articles.

1. The enhanced diffusion of boron in silicon after high-dose implantation and during rapid thermal annealing

2. Implantation and transient B diffusion in Si: The source of the interstitials

3. Mechanisms of implant damage annealing and transient enhanced diffusion in Si

4. The role of extended defects on transient boron diffusion in ion-implanted silicon

5. On the relation between dopant anomalous diffusion in Si and end-of-range defects

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1. Formation energies and relative stability of perfect and faulted dislocation loops in silicon;Journal of Applied Physics;2000-06-15

2. Nonconservative Ostwald ripening of dislocation loops in silicon;Applied Physics Letters;1998-11-16

3. Transient enhanced diffusion of boron in presence of end-of-range defects;Journal of Applied Physics;1997-09-15

4. The effect of the boron doping level on the thermal behavior of end-of-range defects in silicon;Applied Physics Letters;1997-07-21

5. Depth Dependence of Dislocation Loop Dissolution Kinetics in Ion Implanted Silicon;Solid State Phenomena;1997-07