Nonconservative Ostwald ripening of dislocation loops in silicon
Author:
Publisher
AIP Publishing
Subject
Physics and Astronomy (miscellaneous)
Link
http://aip.scitation.org/doi/pdf/10.1063/1.122642
Reference28 articles.
1. A model of diffusion-controlled annealing of dislocation loops in pre-amorphized silicon
2. A Point Defect Based Two‐Dimensional Model of the Evolution of Dislocation Loops in Silicon during Oxidation
3. Simulation of cluster evaporation and transient enhanced diffusion in silicon
4. Ostwald ripening of end-of-range defects in silicon
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