Mechanisms of implant damage annealing and transient enhanced diffusion in Si
Author:
Publisher
AIP Publishing
Subject
Physics and Astronomy (miscellaneous)
Link
http://aip.scitation.org/doi/pdf/10.1063/1.112483
Reference5 articles.
1. Reactions of point defects and dopant atoms in silicon
2. Experiments on atomic-scale mechanisms of diffusion
3. Influence of Damage Depth Profile on the Characteristics of Shallow p+/n Implanted Junctions
4. Influence of Damage Depth Profile on the Characteristics of Shallow p+/n Implanted Junctions
5. Transient diffusion of low‐concentration B in Si due to29Si implantation damage
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