Modelling of Boron Trapping at End-of-Range defects in pre-amorphized ultra-shallow junctions-Reference-Cited by-同舟云学术

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Modelling of Boron Trapping at End-of-Range defects in pre-amorphized ultra-shallow junctions

Published:2008-12 Issue: Volume:154-155 Page:275-278
ISSN:0921-5107
Container-title:Materials Science and Engineering: B
language:en
Short-container-title:Materials Science and Engineering: B

Author:

Bazizi E.M.,Fazzini P.F.,Zechner C.,Tsibizov A.,Kheyrandish H.,Pakfar A.,Ciampolini L.,Tavernier C.,Cristiano F.

Publisher

Elsevier BV

Subject

Mechanical Engineering,Mechanics of Materials,Condensed Matter Physics,General Materials Science

Reference19 articles.

1. Evidence on the mechanism of boron deactivation in Ge-preamorphized ultrashallow junctions

2. Nucleation, growth and dissolution of extended defects in implanted Si: impact on dopant diffusion

3. Mechanisms of implant damage annealing and transient enhanced diffusion in Si

4. Physical mechanisms of transient enhanced dopant diffusion in ion-implanted silicon

5. B cluster formation and dissolution in Si: A scenario based on atomistic modeling

Cited by 8 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. Composition of Carbon Clusters in Implanted Silicon Using Atom Probe Tomography;Microscopy and Microanalysis;2021-09-21

2. Diffusion and trapping of implanted hydrogen in a Si/Si:B/Si structure;Materials Science in Semiconductor Processing;2017-08

3. Effect of carbon situating at end-of-range defects on silicon self-diffusion investigated using pre-amorphized isotope multilayers;Japanese Journal of Applied Physics;2016-02-22

4. Observation of silicon self-diffusion enhanced by the strain originated from end-of-range defects using isotope multilayers;Journal of Applied Physics;2015-09-21

5. Quantification of the number of Si interstitials formed by hydrogen implantation in silicon using boron marker layers;Nuclear Instruments and Methods in Physics Research Section B: Beam Interactions with Materials and Atoms;2014-05

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