Observation of silicon self-diffusion enhanced by the strain originated from end-of-range defects using isotope multilayers-Reference-Cited by-同舟云学术

Observation of silicon self-diffusion enhanced by the strain originated from end-of-range defects using isotope multilayers

Published:2015-09-21 Issue:11 Volume:118 Page:115706
ISSN:0021-8979
Container-title:Journal of Applied Physics
language:en
Short-container-title:Journal of Applied Physics

Author:

Isoda Taiga¹,Uematsu Masashi¹,Itoh Kohei M.¹

Affiliation:

1. School of Fundamental Science and Technology, Keio University, 3-14-1 Hiyoshi, Kohoku-ku, Yokohama 223-8522, Japan

Funder

JSPS Core-to-Core Program

MEXT

NanoQuine

RIEC

Japan Society for the Promotion of Science (JSPS)

Tohoku University

Publisher

AIP Publishing

Subject

General Physics and Astronomy

Link

http://aip.scitation.org/doi/pdf/10.1063/1.4931421

Reference35 articles.

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3. Germanium Implantation into Silicon: An Alternate Pre‐Amorphization/Rapid Thermal Annealing Procedure for Shallow Junction Formation

4. Influence of dislocation loops created by amorphizing implants on point defect and boron diffusion in silicon

5. A systematic analysis of defects in ion-implanted silicon

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