Suppression of transient enhanced diffusion in sub-micron patterned silicon template by dislocation loops formation-Reference-Cited by-同舟云学术

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Suppression of transient enhanced diffusion in sub-micron patterned silicon template by dislocation loops formation

Published:2015-10 Issue:10 Volume:5 Page:107128
ISSN:2158-3226
Container-title:AIP Advances
language:en
Short-container-title:AIP Advances

Author:

Hu Kuan-Kan¹,Chang Ruey-Dar²,Woon Wei Yen¹^ORCID

Affiliation:

1. Department of Physics, National Central University, Jungli, 32054, Taiwan, Republic of China

2. Chang Gung University, Taoyuan, Taiwan 33302, Republic of China

Funder

Ministry of Science and Technology, Taiwan (MOST)

Publisher

AIP Publishing

Subject

General Physics and Astronomy

Link

http://aip.scitation.org/doi/pdf/10.1063/1.4934674

Reference15 articles.

1. Impact of Reducing STI-Induced Stress on Layout Dependence of MOSFET Characteristics

2. Modeling mechanical stress effect on dopant diffusion in scaled MOSFETs

3. Direct Evaluation of Gate Line Edge Roughness Impact on Extension Profiles in Sub-50-nm n-MOSFETs

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