Point defects observed in crystalline silicon implanted by MeV Si ions at elevated temperatures
Author:
Publisher
Elsevier BV
Subject
Instrumentation,Nuclear and High Energy Physics
Reference25 articles.
1. Dielectric breakdown wearout limitation of thermally-grown thin-gate oxides
2. Mesotaxy: Single‐crystal growth of buried CoSi2layers
3. Ion beam synthesis of epitaxial silicides: fabrication, characterization and applications
4. Ion-beam-induced epitaxial crystallization and amorphization in silicon
5. ION IMPLANTATION OF SILICON: II. ELECTRICAL EVALUATION USING HALL-EFFECT MEASUREMENTS
Cited by 24 articles. 订阅此论文施引文献 订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献
1. Механізм відпалу VO дефектів в n-Si при високотемпературному імпульсному електронному опроміненні;Ukrainian Journal of Physics;2022-02-08
2. Role of the intensity of high-temperature electron irradiation in accumulation of vacancy-oxygen defects in Cz n-Si;Journal of Materials Research;2021-03-15
3. Radiation induced deep level defects in bipolar junction transistors under various bias conditions;Nuclear Instruments and Methods in Physics Research Section B: Beam Interactions with Materials and Atoms;2015-12
4. Accumulation of VO Defects in N-Si at High-Temperature Pulse Electron Irradiation: Generation and Annealing Kinetics, Dependence on Irradiation Intensity;Solid State Phenomena;2011-08
5. Scanning ion deep level transient spectroscopy: II. Ion irradiated Au–Si Schottky junctions;Journal of Physics D: Applied Physics;2006-03-17
1.学者识别学者识别
2.学术分析学术分析
3.人才评估人才评估
"同舟云学术"是以全球学者为主线，采集、加工和组织学术论文而形成的新型学术文献查询和分析系统，可以对全球学者进行文献检索和人才价值评估。用户可以通过关注某些学科领域的顶尖人物而持续追踪该领域的学科进展和研究前沿。经过近期的数据扩容，当前同舟云学术共收录了国内外主流学术期刊6万余种，收集的期刊论文及会议论文总量共计约1.5亿篇，并以每天添加12000余篇中外论文的速度递增。我们也可以为用户提供个性化、定制化的学者数据。欢迎来电咨询！咨询电话：010-8811{复制后删除}0370
www.globalauthorid.com
TOP
Copyright © 2019-2024 北京同舟云网络信息技术有限公司 京公网安备11010802033243号 京ICP备18003416号-3