Radiation induced deep level defects in bipolar junction transistors under various bias conditions-Reference-Cited by-同舟云学术

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Radiation induced deep level defects in bipolar junction transistors under various bias conditions

Published:2015-12 Issue: Volume:365 Page:247-251
ISSN:0168-583X
Container-title:Nuclear Instruments and Methods in Physics Research Section B: Beam Interactions with Materials and Atoms
language:en
Short-container-title:Nuclear Instruments and Methods in Physics Research Section B: Beam Interactions with Materials and Atoms

Author:

Liu Chaoming,Yang Jianqun,Li Xingji,Ma Guoliang,Xiao Liyi,Bollmann Joachim

Funder

National Natural Science Foundation of China

Fundamental Research Funds for the Central Universities

Publisher

Elsevier BV

Subject

Instrumentation,Nuclear and High Energy Physics

Reference19 articles.

1. Assessment of gated sweep technique for total dose and dose rate analysis in bipolar oxides

2. Correlation of Particle-Induced Displacement Damage in Silicon

3. Charge separation for bipolar transistors

4. Radiation effects on bipolar junction transistors induced by 25MeV carbon ions

5. Synergistic Radiation Effects on PNP Transistors Caused by Protons and Electrons

Cited by 1 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. Effect of electric field on radiation defects in NPN transistors;Nuclear Instruments and Methods in Physics Research Section B: Beam Interactions with Materials and Atoms;2020-03

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