Effect of electric field on radiation defects in NPN transistors-Reference-Cited by-同舟云学术

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Effect of electric field on radiation defects in NPN transistors

Published:2020-03 Issue: Volume:467 Page:114-117
ISSN:0168-583X
Container-title:Nuclear Instruments and Methods in Physics Research Section B: Beam Interactions with Materials and Atoms
language:en
Short-container-title:Nuclear Instruments and Methods in Physics Research Section B: Beam Interactions with Materials and Atoms

Author:

Yang Jianqun,Gao Yi,Jiao Qiang,Wei Yidan,Li Hongxia,Li Xingji

Publisher

Elsevier BV

Subject

Instrumentation,Nuclear and High Energy Physics

Reference22 articles.

1. Synergistic effect of ionization and displacement defects in NPN transistors induced by 40-MeV Si Ion irradiation with low fluence;Li;IEEE Trans. Device Mater. Rel.,2015

2. Simultaneous and sequential radiation effects on NPN transistors induced by protons and electrons;Li;IEEE Trans. Nucl. Sci.,2012

3. Synergistic radiation effects on PNP transistors caused by protons and electrons;Li;IEEE Trans. Nucl. Sci.,2012

4. Energy dependence of proton displacement damage factors for bipolar transistors;Summers;IEEE Trans. Nucl. Sci.,1986

5. Bounding the total-dose response of modern bipolar transistors;Kosier;IEEE Trans. Nucl. Sci.,1994

Cited by 1 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. Deep levels model identification in semiconductor barrier structures;IOP Conference Series: Materials Science and Engineering;2020-07-01

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