Affiliation:
1. NAS of Ukraine
2. Institute of Physics of the NAS of Ukraine
3. Taras Shevchenko Kyiv National University
4. Taras Shevchenko Kyiv University
Abstract
Accumulation kinetics of vacancy-oxygen (VO) complexes in Czochralski (Cz) n-Si at 360 °C and 1 MeV electron pulse irradiation has been investigated. It is shown that during the irradiation and simultaneous generation and annealing of VO centers, the accumulation kinetics has non-linear dependence with saturation. It is found that there is a maximal concentration of VO centers, which depends on the radiation intensity (J) and temperature as well. It is also established the annealing of VO centers can substantially be stimulated by the intensity of electron irradiation. An increase of J from 1.25×1015 to 1.25×1016 electrons/(сm2s) does not influence the generation efficiency of VO, though it accelerates their annealing by more than one order of magnitude.
Publisher
Trans Tech Publications, Ltd.
Subject
Condensed Matter Physics,General Materials Science,Atomic and Molecular Physics, and Optics
Cited by
1 articles.
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