DLTS Studies of high-temperature electron irradiated Cz n-Si-Reference-Cited by-同舟云学术

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DLTS Studies of high-temperature electron irradiated Cz n-Si

Published:2004-02 Issue:3 Volume:201 Page:509-516
ISSN:0031-8965
Container-title:physica status solidi (a)
language:en
Short-container-title:phys. stat. sol. (a)

Author:

Neimash V.,Kras'ko M.,Kraitchinskii A.,Voytovych V.,Tishchenko V.,Simoen E.,Rafi J. M.,Claeys C.,Versluys J.,De Gryse O.,Clauws P.

Publisher

Wiley

Subject

Condensed Matter Physics,Electronic, Optical and Magnetic Materials,Condensed Matter Physics,Electronic, Optical and Magnetic Materials

Cited by 8 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. Механізм відпалу VO дефектів в n-Si при високотемпературному імпульсному електронному опроміненні;Ukrainian Journal of Physics;2022-02-08

2. Role of the intensity of high-temperature electron irradiation in accumulation of vacancy-oxygen defects in Cz n-Si;Journal of Materials Research;2021-03-15

3. Simulation of Electronic Center Formation by Irradiation in Silicon Crystals;Journal of Electronic Materials;2016-10-05

4. Combined multiparametric X-ray diffraction diagnostics of microdefects in silicon crystals after irradiation by high-energy electrons;Journal of Surface Investigation. X-ray, Synchrotron and Neutron Techniques;2013-05

5. X‐ray diffraction characterization of microdefects in silicon crystals after high‐energy electron irradiation;physica status solidi (a);2011-10-11

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