Deep Levels in High-Temperature 1 MeV Electron-Irradiated n-Type Czochralski Silicon-Reference-Cited by-同舟云学术

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Deep Levels in High-Temperature 1 MeV Electron-Irradiated n-Type Czochralski Silicon

Published:2003-12-10 Issue:Part 1, No. 12 Volume:42 Page:7184-7188
ISSN:0021-4922
Container-title:Japanese Journal of Applied Physics
language:en
Short-container-title:Jpn. J. Appl. Phys.

Author:

Simoen Eddy,Rafí Joan Marc,Claeys Cor,Neimash Vlad,Kraitchinskii Anatolii,Kras'ko Mykola,Tischenko Valerii,Voitovych Vasyl,Versluys Jorg,Clauws Paul

Publisher

IOP Publishing

Subject

General Physics and Astronomy,Physics and Astronomy (miscellaneous),General Engineering

Link

http://stacks.iop.org/1347-4065/42/i=12R/a=7184/pdf

Cited by 6 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. The mechanism of the irradiation synergistic effect of silicon bipolar junction transistors explained by multiscale simulations of Monte Carlo and excited-state first-principle calculations;The Journal of Chemical Physics;2023-07-21

2. Механізм відпалу VO дефектів в n-Si при високотемпературному імпульсному електронному опроміненні;Ukrainian Journal of Physics;2022-02-08

3. Role of the intensity of high-temperature electron irradiation in accumulation of vacancy-oxygen defects in Cz n-Si;Journal of Materials Research;2021-03-15

4. Accumulation of VO Defects in N-Si at High-Temperature Pulse Electron Irradiation: Generation and Annealing Kinetics, Dependence on Irradiation Intensity;Solid State Phenomena;2011-08

5. On the Effect of Lead on Irradiation Induced Defects in Silicon;Solid State Phenomena;2005-12

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