On the Effect of Lead on Irradiation Induced Defects in Silicon-Reference-Cited by-同舟云学术

On the Effect of Lead on Irradiation Induced Defects in Silicon

Published:2005-12 Issue: Volume:108-109 Page:373-378
ISSN:1662-9779
Container-title:Solid State Phenomena
language:
Short-container-title:SSP

Author:

David Marie-Laure¹,Simoen Eddy²,Claeys Cor²,Neimash V.B.³,Kras'ko M.³,Kraitchinskii A.³,Voytovych V.,Kabaldin A.,Barbot Jean François⁴

Affiliation:

1. Laboratoire de Métallurgie Physique UMR 6630, SP2MI

2. IMEC Interuniversity Microelectronics Center

3. National Academy of Sciences of Ukraine

4. Institut Pprime CNRS - Université de Poitiers - ENSMA - UPR 3346

Abstract

Different group IV impurities (Pb, C, and Sn) have been introduced in the melt during the growth of n-type Czochralski silicon. The samples have been irradiated with 1 MeV electrons to a fluence of 4x1015cm-2. The irradiation-induced defects have been studied by Deep Level Transient Spectroscopy (DLTS). It is shown that the formation of one of the irradiation-induced deep level is avoided by the Pb-doping. This level is located at 0.37 eV from the conduction band edge (EC) and shows an apparent capture cross-section of 7x10-15cm2. In addition, another irradiation induced deep level located at EC - 0.32 eV has been studied in more details.

Publisher

Trans Tech Publications, Ltd.

Subject

Condensed Matter Physics,General Materials Science,Atomic and Molecular Physics, and Optics

Link

https://www.scientific.net/SSP.108-109.373.pdf

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