ION IMPLANTATION OF SILICON: II. ELECTRICAL EVALUATION USING HALL-EFFECT MEASUREMENTS

Abstract

Hall-effect and sheet-resistivity measurements have been made on silicon samples implanted with Sb, Ga, and As ions at energies between 20 and 75 keV. These measurements determine the weighted average of the number Ns of carriers/cm2 and the carrier mobility in the implanted layer. A combination of Hall measurements and layer-removal techniques was used in some cases to obtain a more accurate value of the number of carriers/cm2 and the depth dependence of the carrier concentration and mobility.For Sb implantations both temperature and dose affect the anneal characteristics. Silicon samples implanted with Sb at room temperature exhibited n-type behavior following anneal at 300 °C, with little increase in Ns up to about 550 °C anneal temperatures. A 600 °C 10-minute anneal produced an order-of-magnitude increase in Ns. This change is associated with reordering of the amorphous layer created during room-temperature implantations. This amorphous layer is not produced in implantations made at temperatures above 450 °C. In low-dose (<1014/cm2) Sb implantations at 500 °C, Ns increased by a factor of 2 to 3 during anneal to 800 °C. In high-dose (>5 × 1014/cm2) Sb implantations, the carrier concentration exceeded the limit set by thermal equilibrium solubility of Sb in silicon. Under these conditions, annealing caused a decrease in Ns toward the value associated with the solubility.Such supersaturation effects were not observed in Ga and As implantations at 500 °C. Annealing to temperatures of 800–900 °C produced a one-to-two order-of-magnitude increase in the number of carriers/cm2. In Ga implantations annealed to 800–900 °C, the number of carriers/cm2 increased approximately linearly with increasing dose and then leveled off at a value near that expected from thermal solubility.The Rutherford-scattering data in the preceding paper indicates that the difference in implantation behavior between various ion species is due to differences in the relative number of ions on substitutional sites.