Author:
Ridgway M.C.,Elliman R.G.,Faith M.E.,Kemeny P.C.,Davies M.
Subject
Instrumentation,Nuclear and High Energy Physics
Cited by
10 articles.
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1. The effects of thermal annealing on iron bombarded InP/InGaAs multilayer structures;Nuclear Instruments and Methods in Physics Research Section B: Beam Interactions with Materials and Atoms;2006-07
2. Electrical isolation of n- and p-In0.53Ga0.47As epilayers using ion irradiation;Journal of Applied Physics;2003-11-15
3. Electrical isolation of n-type InP layers by helium implantation at variable substrate temperatures;Nuclear Instruments and Methods in Physics Research Section B: Beam Interactions with Materials and Atoms;2002-04
4. Electrical isolation of n-type and p-type InP layers by proton bombardment;Journal of Applied Physics;2001-05-15
5. Electrical isolation of n-type InP by ion bombardment: Dose dependence and thermal stability;Nuclear Instruments and Methods in Physics Research Section B: Beam Interactions with Materials and Atoms;2001-04