Single‐step implant isolation ofp+‐InP with 5‐MeV O ions
Author:
Publisher
AIP Publishing
Subject
Physics and Astronomy (miscellaneous)
Link
http://aip.scitation.org/doi/pdf/10.1063/1.106792
Reference14 articles.
1. Ion implantation for isolation of III-V semiconductors
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3. Mev Ion Beam Applications In III-V Semiconductors
4. Single‐energy, MeV implant isolation of multilayer III‐V device structures
5. Use of MeV O+ion implantation for isolation of GaAs/AlGaAs heterojunction bipolar transistors
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1. Electrical isolation of n- and p-In0.53Ga0.47As epilayers using ion irradiation;Journal of Applied Physics;2003-11-15
2. InGaAsP digital optical wwitch on InP;SPIE Proceedings;2003-02-01
3. Electrical isolation of n-type and p-type InP layers by proton bombardment;Journal of Applied Physics;2001-05-15
4. Ion mass and temperature dependence of damage production in ion implanted InP;Journal of Applied Physics;1997-12-15
5. Ion implantation damage of InP and InGaAs;Ion Beam Modification of Materials;1996
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