Ion mass and temperature dependence of damage production in ion implanted InP
Author:
Publisher
AIP Publishing
Subject
General Physics and Astronomy
Link
http://aip.scitation.org/doi/pdf/10.1063/1.366499
Reference47 articles.
1. Ion‐implantedn‐ andp‐type layers in InP
2. The effect of implant temperature on the electrical characteristics of ion implanted indium phosphide
3. Structural and electrical properties of Si‐ and Se‐implanted InP layers
4. Lattice location and electrical activity of ion‐implanted Sn in InP
5. Lattice location and electrical activity of Ge co‐implanted with P into InP
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