Electrical isolation of n-type and p-type InP layers by proton bombardment
Author:
Publisher
AIP Publishing
Subject
General Physics and Astronomy
Link
http://aip.scitation.org/doi/pdf/10.1063/1.1365063
Reference23 articles.
1. High‐power and high‐speed 1.3 μm V‐grooved inner‐stripe lasers with new semi‐insulating current confinement structures onp‐InP substrates
2. High performance of Fe:InP/InGaAs metal/semiconductor/metal photodetectors grown by metalorganic vapor phase epitaxy
3. InP based optoelectronics
4. Ion implantation for isolation of III-V semiconductors
5. ION IMPLANTATION IN III–V SEMICONDUCTOR TECHNOLOGY
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